In most switching applications, the bootstrap circuit is widely used to drive the high-side metal-oxidesemiconductor field-effect transistor (MOSFET). This bootstrap circuit technique has the ...
The purpose of this paper is to demonstrate a systematic approach to design high-performance bootstrap gate drive circuits for high-frequency, high-power, and high-efficiency switching applications ...
This file type includes high resolution graphics and schematics when applicable. In some situations, it becomes necessary to drive a MOSFET (or IGBT) with a voltage that’s lower than its ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added five products to its lineup of MOSFET gate driver ICs in the TCK42xG Series for mobile devices ...
Silicon Carbide (SiC) power semiconductors are rapidly emerging in the commercial market. These devices offer several benefits over conventional Silicon-based power semiconductors. SiC MOSFETs can ...
(Bipolar Junction) Transistors versus MOSFETs: both have their obvious niches. FETs are great for relatively high power applications because they have such a low on-resistance, but transistors are ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started mass production of "TB9103FTG," a gate driver IC [1] for automotive brushed DC motors, ...
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