Infineon is starting volume production for the EASY 1B full-SiC module and showing module platforms and topologies for the 1200 V CoolSiC MOSFET family. “Silicon carbide has reached a tipping point: ...
Infineon Technologies AG has extended its CoolSiC portfolio with the introduction of M1H technology 1,200-V SiC MOSFETs with enhanced features. These devices will be available in Easy modules and ...
Electric vehicles are about to gain a new kind of fast charging lane, one that hides in the asphalt instead of standing in a parking lot. Infineon’s latest silicon carbide power modules are turning ...
The "1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon Complete Teardown Report" report has been added to ResearchAndMarkets.com's offering. The market outlook for SiC devices is promising ...
Silicon carbide (SiC) continues to carve out a place for itself in power electronics after decades of dominance by silicon. SiC-based power switches are becoming the gold standard in the three-phase ...
Infineon Technologies AG uses the advanced neutral-point-clamped (ANPC) topology for its hybrid silicon-carbide (SiC) and IGBT power module EasyPACK 2B in the 1200-V family. Optimizing for sweet-spot ...
Bold claims in electrification often disappoint when real‑world constraints are factored in-but providing 300 kW wireless charging to moving vehicles on a public highway is no longer merely ...
Infineon Technologies will supply Silicon Carbide (SiC) power modules HybridPACK Drive G2 CoolSiC and bare die products to Xiaomi's EVs, including the recently announced SU7, until 2027, according to ...
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