The MSK3003 is a 3-phase bridge MOSFET power module that employs space efficient isolated ceramic tab power SIP package. This device interfaces directly with most brushless motor drive IC’s without ...

The MSK3004 is an H-bridge MOSFET power module available in a space efficient isolated ceramic tab power SIP package. This device contains P-channel MOSFETS for the top transistors and N-channel ...

SemiQ’s SOT-227 SiC power modules, which are tested beyond 1,400 V, target battery chargers, photovoltaic inverters, server ...

Called VOMDA1271, “the component is available in a SOP-4 housing. The driver is the only one of its kind in this package size with an isolation voltage of 3.750 V [sic] and a typical open-circuit ...

ON Semiconductor has brought out a pair of 1200V SiC MOSFET 2-PACK modules for the EV charger market. EC charging stations require power levels in excess of 350 kW with efficiencies of 95% becoming ...

CISSOID, a specialist in high temperature semiconductors, has announced a new 3-Phase SiC MOSFET Intelligent Power Module (IPM) platform for E-mobility. The IPM technology offers an all-in-one ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...

SemiQ has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology. 1200 V Gen3 SiC MOSFET modules Credit: SemiQ In addition to smaller die sizes, ...

Infineon expanded its EiceDRIVER family with new isolated gate-driver ICs designed for electric vehicles. The parts support the latest IGBT and SiC technologies, including the HybridPACK Drive G2 ...

The T-type circuit structure consists of three MOS FET relays that help reduce the leakage current to a minimal level without affecting the test equipment's inspection accuracy, allowing ...