ROHM has integrated VCSEL technology with MOSFET drivers in a module to achieve the shorter pulses and high output required for more accurate sensing. Conventionally, in VCSEL-equipped laser light ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed “MG250YD2YMS3,” the industry’s first [1] 2200V dual silicon carbide (SiC) MOSFET module for ...
CISSOID, a specialist in high temperature semiconductors, has announced a new 3-Phase SiC MOSFET Intelligent Power Module (IPM) platform for E-mobility. The IPM technology offers an all-in-one ...
Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “ MG800FXF2YMS3,” a silicon carbide (SiC) MOSFET module integrating newly developed dual channel SiC MOSFET chips with ratings ...
IXYS Colorado announced its new series, the IXZ631, an integrated high-speed gate driver and MOSFET RF modules featuring very low insertion inductance and isolated substrate. The product is designed ...
Optimized for high bus voltage applications, these devices are designed to handle bus voltages exceeding 1000V. The power pins of the series are thickened to 2mm, enabling the devices to carry higher ...
Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...
Infineon expanded its EiceDRIVER family with new isolated gate-driver ICs designed for electric vehicles. The parts support the latest IGBT and SiC technologies, including the HybridPACK Drive G2 ...
Find a downloadable version of this story in pdf format at the end of the story. The synchronous buck converter has become the ubiquitous standard in electronic equipment. While the basic topology is ...
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