Nature

Mechanism of selective SiO2/photoresist reactive ion etching in an inductively coupled plasma operated in a C4F8/H2 gas mixture

The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...
Nasdaq

Lam Research Introduces Groundbreaking Suite of Selective Etch Tools to Accelerate Chipmakers’ 3D Roadmaps

FREMONT, Calif., Feb. 09, 2022 (GLOBE NEWSWIRE) -- Lam Research Corp. (NASDAQ: LRCX) today announced a new suite of selective etch products that apply breakthrough wafer fabrication techniques and ...
Semiconductor Engineering

Accelerating Dry Etch Processes During Feature Dependent Etch

In dry etching, the trajectory of accelerated ions is non-uniform and non-vertical, due to collisions with gas molecules and other random thermal effects (figure 1). This has an impact on etch results ...
Nature

Plasma Chemistry and Etching Processes in Semiconductor Fabrication

Plasma chemistry and etching processes form the backbone of modern semiconductor fabrication, enabling the precise patterning and removal of material layers essential to device performance. By ...