CEA-Leti has announced a major advance in semiconductor manufacturing, successfully fabricating fully functional 2.5 V SOI CMOS devices at just 400 °C. Low-temperature CMOS breakthrough Credit: ...
CEA-Leti and STMicroelectronics presented results at IEDM 2025 showcasing the key enablers for a new high-performance and versatile RF Si platform co-integrating best-in-class active and passive ...
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