Silicon nitride (Si3N4) etching is a critical process step in the fabrication of three-dimensional NAND flash memories, where vertically stacked layers demand exceptional process precision. The ...
Released every 12 to 18 months, 3D NAND scaling outpaces most other semiconductor devices in replacement rate and performance ...
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After years in R&D, a technology called cryogenic etch is re-emerging as a possible option for production as the industry faces new challenges in memory and logic. Cryogenic etch removes materials in ...
In this paper, we describe how Oxford Instruments Plasma Technology solution delivers controlled processing of slanted gratings used as light coupler for Augmented Reality waveguide combiners. We ...
An example of directional etching for nanohole arrays of less than 500nm in diameter. (Image: A*STAR Institute of Materials Research and Engineering) Wet etching can be classified into two main types ...
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